Pixel array having a plurality of pixel unit

ABSTRACT

A pixel array including a first scan line, a first data line, a first signal line, a first pixel unit, and a second pixel unit is provided. The first pixel unit includes a first common electrode and a second common electrode. The first common electrode and the second common electrode are respectively located on a first side and a second side of the first scan line. The second common electrode is electrically connected to the first signal line through a first conductive structure. The second pixel unit includes a third common electrode and a fourth common electrode. The third common electrode and the fourth common electrode are respectively located on the first side and the second side of the first scan line. The third common electrode is electrically connected to the first signal line through a second conductive structure.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims the priority benefit of Taiwan applicationserial no. 106115227, filed on May 9, 2017. The entirety of theabove-mentioned patent application is hereby incorporated by referenceherein and made a part of this specification.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The invention relates to a pixel array, and more particularly, to apixel array having a conductive structure.

2. Description of Related Art

In recent years, with the continuous progress of display technology,viewer's demand on a display quality (e.g., image resolution, colorsaturation, etc.) of a display also becomes increasingly higher. Yet, inorder to manufacture a display with high performance, a pixel array inthe display needs to include conductive structures connecting differentconductive layers.

In the pixel array, a great portion of area is occupied by theconductive structures connecting the different conductive layers.Consequently, an aperture ratio of the pixel array is restricted therebyaffecting the display quality. Accordingly, there is an urgent need fora method to solve the above problem while increasing the aperture ratio.

SUMMARY OF THE INVENTION

The invention is directed to a pixel array, which is capable of solvingthe problem of the aperture ratio restricted by the conductivestructures.

A pixel array of the invention includes a first scan line, a first dataline, a first signal line, a first pixel unit, and a second pixel unit.The first data line is disposed intersecting the first scan line. Thefirst signal line is located on the first data line. The first data lineis located between the first pixel unit and the second pixel unit. Thefirst pixel unit includes a first common electrode, a second commonelectrode, a first pixel electrode and a second pixel electrode. Thefirst common electrode and the second common electrode are respectivelylocated on a first side and a second side of the first scan line. Thesecond common electrode is electrically connected to the first signalline through a first conductive structure. The first pixel electrode andthe second pixel electrode are respectively overlapping a part of thefirst common electrode and a part of the second common electrode. Thesecond pixel unit includes a third common electrode, a fourth commonelectrode, a third pixel electrode and a fourth pixel electrode. Thethird common electrode and the fourth common electrode are respectivelylocated on the first side and the second side of the first scan line.The first common electrode is electrically connected to the third commonelectrode, the second common electrode is electrically connected to thefourth common electrode, and the third common electrode is electricallyconnected to the first signal line through a second conductivestructure. The third pixel electrode and the fourth pixel electrode arerespectively overlapping a part of the third common electrode and a partof the fourth common electrode.

Based on the above, in the pixel array of the invention, the first pixelunit has the first conductive structure, and the second pixel unit hasthe second conductive structure. Because the second common electrode ofthe first pixel unit can be electrically connected to the third commonelectrode of the second pixel unit simply through two conductivestructures and the first signal line, the number of conductivestructures required for conducting through the common electrodes may bereduced accordingly. In this way, the problem regarding the insufficientaperture ratio of the pixel array can be solved.

To make the above features and advantages of the disclosure morecomprehensible, several embodiments accompanied with drawings aredescribed in detail as follows.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

FIG. 1A is a top view of a pixel array according to an embodiment of theinvention.

FIG. 1B is a cross-sectional view taken along line AA′ of FIG. 1A.

FIG. 1C is a cross-sectional view taken along line BB′ of FIG. 1A.

FIG. 2 is a top view of a pixel array according to an embodiment of theinvention.

FIG. 3 is a top view of a pixel array according to an embodiment of theinvention.

FIG. 4 is a top view of a pixel array according to an embodiment of theinvention.

FIG. 5 is a top view of a pixel array according to an embodiment of theinvention.

DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to the present preferredembodiments of the invention, examples of which are illustrated in theaccompanying drawings. Wherever possible, the same reference numbers areused in the drawings and the description to refer to the same or likeparts.

The following describes the embodiments with reference to theaccompanying drawings in detail, so as to make the aspects of thepresent disclosure more comprehensible. However, the mentionedembodiments are not intended to limit the scope of the presentdisclosure, and the description of the operation of a structure is notintended to limit an execution sequence. Any device with equivalentfunctions that is produced from a structure formed by a recombination ofelements shall fall within the scope of the present disclosure. Besides,according to industry standards and practices, the drawings are merelyintended to assist the description, and are not drawn according tooriginal dimensions. In practice, dimensions of various features may bearbitrarily increased or decreased to facilitate the description. Sameelements in the description below are indicated by a same referencesign, so as to facilitate the comprehension.

In the present disclosure, when an element is “connected” or “coupled”,it may indicate that the element is “electrically connected” or“electrically coupled”. “Connected” or “coupled” may further be used toindicate that two or more elements operate cooperatively or interactwith each other. Oppositely, when an element is “directly on anotherelement” or “directly connected to” another element, there is nointermediate element. As used herein, “connection” may refer to physicaland/or electrical connection.

As used herein, “about”, “similar”, or “substantially” includes thevalue and an average value of values in an acceptable deviation range ofa specific value determined by a person of ordinary skill in the art,taking the discussed measurement and a specific quantity of errorsrelated to the measurement (that is, limitations of a measurementsystem) into consideration. For example, “substantially” may indicatewithin one or more standard deviations of the value, or within ±10%, or±5%.

Unless otherwise defined, as used herein, all the terms (includingtechnical and scientific terms) have the same meanings as commonlyunderstood by a person of ordinary skill in the art. It will be furtherunderstood that terms defined in commonly used dictionaries shall becomprehended as meanings the same as the meanings in the related art andthe context of the present disclosure, and shall not be comprehended asideal or excessively formal meanings, unless this specification clearlydefined otherwise.

FIG. 1A is a top view of a pixel array 10 according to an embodiment ofthe invention. FIG. 1B is a cross-sectional view taken along line AA′ ofFIG. 1A. FIG. 1C is a cross-sectional view taken along line BB′ of FIG.1A.

Referring to FIG. 1A, FIG. 1B and FIG. 1C together, the pixel array 10includes a first scan line SL1, a first data line DL1, a second dataline DL2, a first signal line CL1, a first pixel unit PU1 and a secondpixel unit PU2. The first data line DL1 is disposed intersecting thefirst scan line SL1. In an embodiment, the second data line DL2 is alsodisposed intersecting the first scan line SL1. The first signal line CL1is located on the first data line DL1. In another embodiment, the pixelarray 10 further includes a second signal line CL2 located on the seconddata line DL2. The first data line DL1 is located between the firstpixel unit PU1 and the second pixel unit PU2. In other words, in thisexample, the first pixel unit PU1 and the second pixel unit PU2 arerespectively located on the left and right sides of the first data lineDLL In an embodiment, the second pixel unit PU2 is located between thesecond data line DL2 and the first data line DL1. In an embodiment, thefirst pixel unit PU1 and the second pixel unit PU2 are formed on asubstrate BS.

The first pixel unit PU1 includes a first common electrode CE1, a secondcommon electrode CE2, a first pixel electrode PE1 and a second pixelelectrode PE2. The first common electrode CE1 and the second commonelectrode CE2 are respectively located on a first side W1 and a secondside W2 of the first scan line SL1. The second common electrode CE2 iselectrically connected to the first signal line CL1 through a firstconductive structure CS1. The first pixel electrode PE1 and the secondpixel electrode PE2 are respectively overlapping a part of the firstcommon electrode CE1 and a part of the second common electrode CE2.

In an embodiment, the first pixel unit PU1 further includes a firstswitch element TFT1 and a second switch element TFT2.

The first switch element TFT1 includes a first drain electrode D1, afirst source electrode S1, a first gate electrode G1 and a firstsemiconductor layer SM1. The first gate electrode G1 of the first switchelement TFT1 is electrically connected to the first scan line SL1, thefirst source electrode S1 is electrically connected to the first dataline DL1, and the first pixel electrode PE1 is electrically connected tothe first drain electrode D1 through a first contact TH1. At least partof the first semiconductor layer SM1 is located between the first gateelectrode G1, the first source electrode S1 and the first drainelectrode D1.

The second switch element TFT2 includes a second drain electrode D2, asecond source electrode S2, a second gate electrode G2 and a secondsemiconductor layer SM2. The second gate electrode G2 of the secondswitch element TFT2 is electrically connected to the first scan lineSL1. In an embodiment, the second source electrode S2 of the secondswitch element TFT2 may be electrically connected to the first sourceelectrode S1; more specifically, the second source electrode S2 of thesecond switch element TFT2 is electrically connected to the first dataline DL1 through the first switch element TFT1. The second pixelelectrode PE2 is electrically connected to the second drain electrode D2through a second contact TH2. At least part of the second semiconductorlayer SM2 is located between the second gate electrode G2, the secondsource electrode S2 and the second drain electrode D2.

In the present embodiment, the first drain electrode D1 and the seconddrain electrode D2 both extend towards the first pixel electrode PE1. Inan embodiment, the first source electrode S1 and the second sourceelectrode S2 include U-shaped openings, and the U-shaped openings of thefirst source electrode S1 and the second source electrode S2 both facetowards the first pixel electrode PE1.

In an embodiment, the first pixel unit PU1 further includes a firstsharing element ST1. The first sharing element ST1 includes a gateelectrode SG1, a semiconductor layer SSM1, a source electrode SS1 and adrain electrode SD1. The gate electrode SG1 of the first sharing elementST1 is electrically connected to the first scan line SL1. At least partof the semiconductor layer SSM1 is located between the gate electrodeSG1, the source electrode SS1 and the drain electrode SD1. The sourceelectrode SS1 is electrically connected to the second pixel electrodePE2 through the second contact TH2, and the source electrode SS1 iselectrically connected to the second drain electrode D2 of the secondswitch element TFT2. The first conductive structure CS1 electricallyconnects the first signal line CL1, the drain electrode SD1 of the firstsharing element ST1 and the second common electrode CE2.

In an embodiment, the first signal line CL1, the drain electrode SD1 ofthe first sharing element ST1 and the second common electrode CE2 belongto different film layers. The film layer where the drain electrode SD1of the first sharing element ST1 is located is sandwiched between thefilm layer where the first signal line CL1 is located and the film layerwhere the second common electrode CE2 is located. In the presentembodiment, the first conductive structure CS1 electrically connects thefirst signal line CL1, the drain electrode SD1 of the first sharingelement ST1 and the second common electrode CE2. In an embodiment, aninsulation layer PV2 is sandwiched between the film layer where thefirst signal line CL1 is located and the film layer where the drainelectrode SD1 of the first sharing element ST1 is located, and aninsulation layer PV1 is sandwiched between the film layer where thedrain electrode SD1 of the first sharing element ST1 is located and thefilm layer where the second common electrode CE2 is located. In anembodiment, an opening C1 penetrates the insulation layer PV1 and theinsulation layer PV2, and the first conductive structure CS1 is filledin the opening C1.

The second pixel unit PU2 includes a third common electrode CE3, afourth common electrode CE4, a third pixel electrode PE3 and a fourthpixel electrode PE4. The third common electrode CE3 and the fourthcommon electrode CE4 are respectively located on the first side W1 andthe second side W2 of the first scan line SL1. The third pixel electrodePE3 and the fourth pixel electrode PE4 are respectively overlapping apart of the third common electrode CE3 and a part of the fourth commonelectrode CE4.

In an embodiment, the second pixel unit PU2 further includes a thirdswitch element TFT3 and a fourth switch element TFT4.

The third switch element TFT3 includes a third drain electrode D3, athird source electrode S3, a third gate electrode G3 and a thirdsemiconductor layer SM3. The third gate electrode G3 of the third switchelement TFT3 is electrically connected to the first scan line SL1, thethird source electrode S3 is electrically connected to the second dataline DL2, and the third pixel electrode PE3 is electrically connected tothe third drain electrode D3 through a third contact TH3. At least partof the third semiconductor layer SM3 is located between the third gateelectrode G3, the third source electrode S3 and the third drainelectrode D3.

The fourth switch element TFT4 includes a fourth drain electrode D4, afourth source electrode S4, a fourth gate electrode G4 and a fourthsemiconductor layer SM4. The fourth gate electrode G4 of the fourthswitch element TFT4 is electrically connected to the first scan lineSL1. In an embodiment, the fourth source electrode S4 of the fourthswitch element TFT4 may be electrically connected to the third sourceelectrode S3; more specifically, the fourth source electrode S4 of thefourth switch element TFT4 is electrically connected to the second dataline DL2 through the third switch element TFT3. The fourth pixelelectrode PE4 is electrically connected to the fourth drain electrode D4through a fourth contact TH4. At least part of the fourth semiconductorlayer SM4 is located between the fourth gate electrode G4, the fourthsource electrode S4 and the fourth drain electrode D4.

In the present embodiment, the third drain electrode D3 extends towardsthe third pixel electrode PE3, and the fourth drain electrode D4 extendstowards the fourth pixel electrode PE4. In an embodiment, the thirdsource electrode S3 and the fourth source electrode S4 include U-shapedopenings, and the U-shaped openings of the third source electrode S3 andthe fourth source electrode S4 respectively face the third pixelelectrode PE3 and the fourth pixel electrode PE4.

In an embodiment, the second pixel unit PU2 further includes a secondsharing element ST2. The second sharing element ST2 includes a gateelectrode SG2, a semiconductor layer SSM2, a source electrode SS2 and adrain electrode SD2. The gate electrode SG2 of the second sharingelement ST2 is electrically connected to the first scan line SL1. Atleast part of the semiconductor layer SSM2 is located between the gateelectrode SG2, the source electrode SS2 and the drain electrode SD2. Thesource electrode SS2 is electrically connected to the fourth pixelelectrode PE4 through the fourth contact TH4, and the source electrodeSS2 is electrically connected to the fourth drain electrode D4 of thefourth switch element TFT4. A second conductive structure CS2electrically connects the first signal line CL1, the drain electrode SD2of the second sharing element ST2 and the third common electrode CE3.

In an embodiment, the first signal line CL1, the drain electrode SD2 ofthe second sharing element ST2 and the third common electrode CE3 belongto different film layers. The film layer where the drain electrode SD2of the second sharing element ST2 is located is sandwiched between thefilm layer where the first signal line CL1 is located and the film layerwhere the third common electrode CE3 is located. In the presentembodiment, the second conductive structure CS2 electrically connectsthe first signal line CL1, the drain electrode SD2 of the second sharingelement ST2 and the third common electrode CE3. In an embodiment, theinsulation layer PV2 is sandwiched between the film layer where thefirst signal line CL1 is located and the film layer where the drainelectrode SD2 of the second sharing element ST2 is located, and theinsulation layer PV1 is sandwiched between the film layer where thedrain electrode SD2 of the second sharing element ST2 is located and thefilm layer where the third common electrode CE3 is located. In anembodiment, an opening C2 penetrates the insulation layer PV1 and theinsulation layer PV2, and the second conductive structure CS2 is filledin the opening C2.

In an embodiment, the first common electrode CE1 is electricallyconnected to the third common electrode CE3, and the second commonelectrode CE2 is electrically connected to the fourth common electrodeCE4. In an embodiment, the first pixel unit PU1 is adjacent to thesecond pixel unit PU2, the first common electrode CE1 is structurallyconnected to the third common electrode CE3, and the second commonelectrode CE2 is structurally connected to the fourth common electrodeCE4.

In an embodiment, the first common electrode CE1, the second commonelectrode CE2, the third common electrode CE3, the fourth commonelectrode CE4 and the first scan line SL1 belong to a same film layer.In an embodiment, the first pixel electrode PE1, the second pixelelectrode PE2, the third pixel electrode PE3, the fourth pixel electrodePE4, the first signal line CL1, the first conductive structure CS1 andthe second conductive structure CS2 belong to a same film layer.

Based on the above, in the pixel array 10 of the present embodiment, thefirst pixel unit PU1 has the first conductive structure CS1, and thesecond pixel unit PU2 has the second conductive structure CS2. Thesecond common electrode CE2 of the first pixel unit PU1 can beelectrically connected to the third common electrode CE3 of the secondpixel unit PU2 simply through the first conductive structure CS1, thesecond conductive structure CS2 and the first signal line CL1. Becausethe common electrodes on the different sides of the scan line can beelectrically connected by utilizing the conductive structures in thedifferent pixel units and commonly constitute a mesh structure, thenumber of the conductive structures required for conducting through thecommon electrodes can be reduced. In an embodiment, the first sharingelement ST1 is electrically connected to the second common electrode CE2and the first signal line CL1 through the first conductive structureCS1, and the second sharing element ST2 is electrically connected to thethird common electrode CE3 and the first signal line CL1 through thesecond conductive structure CS2. In this way, the problem regardinginsufficient aperture ratio of the pixel array 10 can be solved.

FIG. 2 is a top view of a pixel array 20 according to an embodiment ofthe invention. It should be noted that, the embodiment of FIG. 2 adoptsthe reference numbers and part of the content in the embodiment of FIG.1, where identical or similar reference numbers are used to indicateidentical or similar components, and repeated description for the sametechnical contents is omitted. The omitted part of the description canrefer to the foregoing embodiment, which is not repeated in thefollowing embodiments.

The difference between the pixel array 20 of FIG. 2 and the pixel array10 of FIG. 1 is that, the pixel array 20 further includes a second scanline SL2, a third pixel unit PU3 and a fourth pixel unit PU4.

The second scan line SL2 is disposed intersecting the first data lineDL1 and the second data line DL2. In an embodiment, the third pixel unitPU3 is similar to the first pixel unit PU1. The third pixel unit PU3includes a fifth switch element TFT5, a sixth switch element TFT6, afifth common electrode CE5, a sixth common electrode CE6, a fifth pixelelectrode PE5 and a sixth pixel electrode PE6.

In the present embodiment, the fifth switch element TFT5 and the sixthswitch element TFT6 are electrically connected to the second scan lineSL2. The fifth common electrode CE5 and the sixth common electrode CE6are respectively located on a first side W3 and a second side W4 of thesecond scan line SL2. The fifth pixel electrode PE5 and the sixth pixelelectrode PE6 are respectively overlapping a part of the fifth commonelectrode CE5 and a part of the sixth common electrode CE6.

The fifth switch element TFT5 includes a fifth drain electrode D5, afifth source electrode S5, a fifth gate electrode G5 and a fifthsemiconductor layer SM5. The fifth gate electrode G5 of the fifth switchelement TFT5 is electrically connected to the second scan line SL2. Thefifth source electrode S5 is electrically connected to the first dataline DL1. The fifth pixel electrode PE5 is electrically connected to thefifth drain electrode D5 through a fifth contact TH5. At least part ofthe fifth semiconductor layer SM5 is located between the fifth gateelectrode G5, the fifth source electrode S5 and the fifth drainelectrode D5.

The sixth switch element TFT6 includes a sixth drain electrode D6, asixth source electrode S6, a sixth gate electrode G6 and a sixthsemiconductor layer SM6. The sixth gate electrode G6 of the sixth switchelement TFT6 is electrically connected to the second scan line SL2. Inan embodiment, the sixth source electrode S6 of the sixth switch elementTFT6 may be electrically connected to the fifth source electrode S5;more specifically, the sixth source electrode S6 of the sixth switchelement TFT6 is electrically connected to the first data line DL1through the fifth switch element TFT5. The sixth pixel electrode PE6 iselectrically connected to the sixth drain electrode D6 through a sixthcontact TH6. At least part of the sixth semiconductor layer SM6 islocated between the sixth gate electrode G6, the sixth source electrodeS6 and the sixth drain electrode D6.

In an embodiment, the fifth drain electrode D5 and the sixth drainelectrode D6 both extend towards the fifth pixel electrode PE5. In anembodiment, the fifth source electrode S5 and the sixth source electrodeS6 include U-shaped openings, and the U-shaped openings of the fifthsource electrode S5 and the sixth source electrode S6 both face towardsthe fifth pixel electrode PE5.

In an embodiment, the third pixel unit PU3 further includes a thirdsharing element ST3. The third sharing element ST3 includes a gateelectrode SG3, a semiconductor layer SSM3, a source electrode SS3 and adrain electrode SD3. The gate electrode SG3 of the third sharing elementST3 is electrically connected to the second scan line SL2. At least partof the semiconductor layer SSM3 is located between the gate electrodeSG3, the source electrode SS3 and the drain electrode SD3. The sourceelectrode SS3 of the third sharing element ST3 is electrically connectedto the sixth pixel electrode PE6 through the sixth contact TH6, and thedrain electrode SD3 of the third sharing element ST3 is electricallyconnected to the sixth common electrode CE6 through a third conductivestructure CS3. The third conductive structure CS3 electrically connectsthe first signal line CL1, the drain electrode SD3 of the third sharingelement ST3 and the sixth common electrode CE6.

In an embodiment, the fourth pixel unit PU4 is similar to the secondpixel unit PU2. The fourth pixel unit PU4 includes a seventh switchelement TFT7, an eighth switch element TFT8, a seventh common electrodeCE7, an eighth common electrode CE8, a seventh pixel electrode PE7, aneighth pixel electrode PE8, a fourth sharing element ST4 and a fourthconductive structure CS4.

The seventh switch element TFT7 and the eighth switch element TFT8 areelectrically connected to the second scan line SL2. The seventh commonelectrode CE7 and the eighth common electrode CE8 are respectivelylocated on the first side W3 and the second side W4 of the second scanline SL2. The fifth common electrode CE5 is electrically connected tothe seventh common electrode CE7, and the sixth common electrode CE6 iselectrically connected to the eighth common electrode CE8. The seventhpixel electrode PE7 and the eighth pixel electrode PE8 are respectivelyoverlapping a part of the seventh common electrode CE7 and a part of theeighth common electrode CE8.

The seventh switch element TFT7 includes a seventh drain electrode D7, aseventh source electrode S7, a seventh gate electrode G7 and a seventhsemiconductor layer SM7. The seventh gate electrode G7 of the seventhswitch element TFT7 is electrically connected to the second scan lineSL2. The seventh source electrode S7 is electrically connected to thesecond data line DL2. The seventh pixel electrode PE7 is electricallyconnected to the seventh drain electrode D7 through a seventh contactTH7. At least part of the seventh semiconductor layer SM7 is locatedbetween the seventh gate electrode G7, the seventh source electrode S7and the seventh drain electrode D7.

The eighth switch element TFT8 includes an eighth drain electrode D8, aneighth source electrode S8, an eighth gate electrode G8 and an eighthsemiconductor layer SM8. The eighth gate electrode G8 of the eighthswitch element TFT8 is electrically connected to the second scan lineSL2. In an embodiment, the eighth source electrode S8 of the eighthswitch element TFT8 may be electrically connected to the seventh sourceelectrode S7; more specifically, the eighth source electrode S8 of theeighth switch element TFT8 is electrically connected to the second dataline DL2 through the seventh switch element TFT7. The eighth pixelelectrode PE8 is electrically connected to the eighth drain electrode D8through an eighth contact TH8. At least part of the eighth semiconductorlayer SM8 is located between the eighth gate electrode G8, the eighthsource electrode S8 and the eighth drain electrode D8.

In an embodiment, the fourth pixel unit PU4 further includes the fourthsharing element ST4. The fourth sharing element ST4 includes a gateelectrode SG4, a semiconductor layer SSM4, a source electrode SS4 and adrain electrode SD4. The gate electrode SG4 of the fourth sharingelement ST4 is electrically connected to the second scan line SL2. Atleast part of the semiconductor layer SSM4 is located between the gateelectrode SG4, the source electrode SS4 and the drain electrode SD4. Thesource electrode SS4 of the fourth sharing element ST4 is electricallyconnected to the eighth pixel electrode PE8 through the eighth contactTH8, and the drain electrode SD4 of the fourth sharing element ST4 iselectrically connected to the first signal line CL1 through the fourthconductive structure CS4. The fourth conductive structure CS4electrically connects the first signal line CL1, the drain electrode SD4of the fourth sharing element ST4 and the seventh common electrode CE7.

In an embodiment, the fifth common electrode CE5 is electricallyconnected to the seventh common electrode CE7, and the sixth commonelectrode CE6 is electrically connected to the eighth common electrodeCE8. In an embodiment, the third pixel unit PU3 is adjacent to thefourth pixel unit PU4, the fifth common electrode CE5 is structurallyconnected to the seventh common electrode CE7, and the sixth commonelectrode CE6 is structurally connected to the eighth common electrodeCE8.

In an embodiment, the fifth common electrode CE5 is electricallyconnected to the second common electrode CE2. In an embodiment, thefirst pixel unit PU1 and the third pixel unit PU3 are located onadjacent rows, and the fifth common electrode CE5 of the third pixelunit PU3 is structurally connected to the second common electrode CE2 ofthe first pixel unit PU1. In an embodiment, the seventh common electrodeCE7 is electrically connected to the fourth common electrode CE4. In anembodiment, the second pixel unit PU2 and the fourth pixel unit PU4 arelocated on adjacent rows, and the seventh common electrode CE7 of thefourth pixel unit PU4 is structurally connected to the fourth commonelectrode CE4 of the second pixel unit PU2.

Based on the above, in the pixel array 20 of the present embodiment, thethird pixel unit PU3 has the third conductive structure CS3, and thefourth pixel unit PU4 has the fourth conductive structure CS4. The sixthcommon electrode CE6 of the third pixel unit PU3 can be electricallyconnected to the seventh common electrode CE7 of the fourth pixel unitPU4 simply through the third conductive structure CS3, the fourthconductive structure CS4 and the first signal line CL1. Because thecommon electrodes on the different sides of the scan line can beelectrically connected by utilizing the conductive structures in thedifferent pixel units and commonly constitute a mesh structure, thenumber of the conductive structures required for conducting through thecommon electrodes can be reduced. In an embodiment, the third sharingelement ST3 is electrically connected to the sixth common electrode CE6and the first signal line CL1 through the third conductive structureCS3, and the fourth sharing element ST4 is electrically connected to theseventh common electrode CE7 and the first signal line CL1 through thefourth conductive structure CS4. In this way, the problem regardinginsufficient aperture ratio of the pixel array 20 can be solved.

FIG. 3 is a top view of a pixel array 30 according to an embodiment ofthe invention. It should be noted that, the embodiment of FIG. 3 adoptsthe reference numbers and part of the content in the embodiment of FIG.1, where identical or similar reference numbers are used to indicateidentical or similar components, and repeated description for the sametechnical contents is omitted. The omitted part of the description canrefer to the foregoing embodiment, which is not repeated in thefollowing embodiments.

The difference between the pixel array 30 of FIG. 3 and the pixel array10 of FIG. 1 is that, the pixel array 30 further includes a second scanline SL2, a third data line DL3, a second signal line CL2, a thirdsignal line CL3, a third pixel unit PU3 and a fourth pixel unit PU4.

The second scan line SL2 is disposed intersecting the first data lineDL1 and the second data line DL2. The third data line DL3 is disposedintersecting the first scan line SL1. The first data line DL1 is locatedbetween the second data line DL2 and the third data line DL3. The secondsignal line CL2 is located on the second data line DL2. The third signalline CL3 is located on the third data line DL3.

The third pixel unit PU3 is located between the first data line DL1 andthe third data line DL3. The third pixel unit PU3 includes a fifthswitch element TFT5, a sixth switch element TFT6, a fifth commonelectrode CE5, a sixth common electrode CE6, a fifth pixel electrode PE5and a sixth pixel electrode PE6.

The fifth common electrode CE5 and the sixth common electrode CE6 arerespectively located on a first side W3 and a second side W4 of thesecond scan line SL2. The fifth pixel electrode PE5 and the sixth pixelelectrode PE6 are respectively overlapping a part of the fifth commonelectrode CE5 and a part of the sixth common electrode CE6. The fifthcommon electrode CE5 is electrically connected to the third signal lineCL3 through a third conductive structure CS3.

The fifth switch element TFT5 includes a fifth drain electrode D5, afifth source electrode S5, a fifth gate electrode G5 and a fifthsemiconductor layer SM5. The fifth gate electrode G5 of the fifth switchelement TFT5 is electrically connected to the second scan line SL2, thefifth source electrode S5 is electrically connected to the first dataline DL1, and the fifth pixel electrode PE5 is electrically connected tothe fifth drain electrode D5 through a fifth contact TH5. At least partof the fifth semiconductor layer SM5 is located between the fifth gateelectrode G5, the fifth source electrode S5 and the fifth drainelectrode D5.

The sixth switch element TFT6 includes a sixth drain electrode D6, asixth source electrode S6, a sixth gate electrode G6 and a sixthsemiconductor layer SM6. The sixth gate electrode G6 of the sixth switchelement TFT6 is electrically connected to the second scan line SL2. Inan embodiment, the sixth source electrode S6 of the sixth switch elementTFT6 may be electrically connected to the fifth source electrode S5;more specifically, the sixth source electrode S6 of the sixth switchelement TFT6 is electrically connected to the first data line DL1through the fifth switch element TFT5. The sixth pixel electrode PE6 iselectrically connected to the sixth drain electrode D6 through a sixthcontact TH6. At least part of the sixth semiconductor layer SM6 islocated between the sixth gate electrode G6, the sixth source electrodeS6 and the sixth drain electrode D6.

In the present embodiment, the fifth drain electrode D5 of the fifthswitch element TFT5 extends towards the fifth pixel electrode PE5, andthe sixth drain electrode D6 of the sixth switch element TFT6 extendstowards the sixth pixel electrode PE6.

In an embodiment, the third pixel unit PU3 further includes a thirdsharing element ST3. The third sharing element ST3 includes a gateelectrode SG3, a semiconductor layer SSM3, a source electrode SS3 and adrain electrode SD3. The gate electrode SG3 of the third sharing elementST3 is electrically connected to the second scan line SL2. At least partof the semiconductor layer SSM3 is located between the gate electrodeSG3, the source electrode SS3 and the drain electrode SD3. The sourceelectrode SS3 of the third sharing element ST3 is electrically connectedto the sixth pixel electrode PE6 through the sixth contact TH6, and thethird conductive structure CS3 electrically connects the third signalline CL3, the drain electrode SD3 of the third sharing element ST3 andthe fifth common electrode CE5.

The fourth pixel unit PU4 is located between the first data line DL1 andthe second data line DL2. The fourth pixel unit PU4 includes a seventhswitch element TFT7, an eighth switch element TFT8, a seventh commonelectrode CE7, an eighth common electrode CE8, a seventh pixel electrodePE7 and an eighth pixel electrode PE8. The seventh common electrode CE7and the eighth common electrode CE8 are respectively located on thefirst side and the second side of the second scan line SL2. The fifthcommon electrode CE5 is electrically connected to the seventh commonelectrode CE7, and the sixth common electrode CE6 is electricallyconnected to the eighth common electrode CE8. The seventh pixelelectrode PE7 and the eighth pixel electrode PE8 are respectivelyoverlapping a part of the seventh common electrode CE7 and a part of theeighth common electrode CE8. The eighth common electrode CE8 iselectrically connected to the second signal line CL2 through a fourthconductive structure CS4.

The seventh switch element TFT7 includes a seventh drain electrode D7, aseventh source electrode S7, a seventh gate electrode G7 and a seventhsemiconductor layer SM7. The seventh gate electrode G7 of the seventhswitch element TFT7 is electrically connected to the second scan lineSL2, the seventh source electrode S7 is electrically connected to thesecond data line DL2, and the seventh pixel electrode PE7 iselectrically connected to the seventh drain electrode D7 through aseventh contact TH7. At least part of the seventh semiconductor layerSM7 is located between the seventh gate electrode G7, the seventh sourceelectrode S7 and the seventh drain electrode D7.

The eighth switch element TFT8 includes an eighth drain electrode D8, aneighth source electrode S8, an eighth gate electrode G8 and an eighthsemiconductor layer SM8. The eighth gate electrode G8 of the eighthswitch element TFT8 is electrically connected to the second scan lineSL2. In an embodiment, the eighth source electrode S8 of the eighthswitch element TFT8 may be electrically connected to the seventh sourceelectrode S7; more specifically, the eighth source electrode S8 of theeighth switch element TFT8 is electrically connected to the second dataline DL2 through the seventh switch element TFT7. The eighth pixelelectrode PE8 is electrically connected to the eighth drain electrode D8through an eighth contact TH8. At least part of the eighth semiconductorlayer SM8 is located between the eighth gate electrode G8, the eighthsource electrode S8 and the eighth drain electrode D8.

In the present embodiment, the seventh drain electrode D7 of the seventhswitch element TFT7 and the eighth drain electrode D8 of the eighthswitch element TFT8 both extend towards the seventh pixel electrode PE7.

In an embodiment, the fourth pixel unit PU4 further includes the fourthsharing element ST4. The fourth sharing element ST4 includes a gateelectrode SG4, a semiconductor layer SSM4, a source electrode SS4 and adrain electrode SD4. The gate electrode SG4 of the fourth sharingelement ST4 is electrically connected to the second scan line SL2. Atleast part of the semiconductor layer SSM4 is located between the gateelectrode SG4, the source electrode SS4 and the drain electrode SD4. Thesource electrode SS4 of the fourth sharing element ST4 is electricallyconnected to the eighth pixel electrode PE8 through the eighth contactTH8, and the fourth conductive structure CS4 is electrically connectedto the second signal line CL2, the drain electrode SD4 of the fourthsharing element ST4 and the eighth common electrode CE8.

In the present embodiment, the first conductive structure CS1 is similarto the fourth conductive structure CS4, and the second conductivestructure CS2 is similar to the third conductive structure CS3. With thefirst conductive structure CS1/the fourth conductive structure CS4 andthe second conductive structure CS2/the third conductive structure CS3being alternately arranged in a column direction (an extending directionof the data lines) and a row direction (an extending direction of thescan lines) to prevent similar conductive structures from gatheringtogether, an impedance difference caused by the conductive structurescan be evenly distributed.

FIG. 4 is a top view of a pixel array 40 according to an embodiment ofthe invention. It should be noted that, the embodiment of FIG. 4 adoptsthe reference numbers and part of the content in the embodiment of FIG.1, where identical or similar reference numbers are used to indicateidentical or similar components, and repeated description for the sametechnical contents is omitted. The omitted part of the description canrefer to the foregoing embodiment, which is not repeated in thefollowing embodiments.

The difference between the pixel array 40 of FIG. 4 and the pixel array10 of FIG. 1 is that, the pixel array 40 further includes a third dataline DL3, a third signal line CL3 and a third pixel unit PU3.

The third data line DL3 is disposed intersecting the first scan lineSL1. The first data line DL1 is located between the second data line DL2and the third data line DL3. The third signal line CL3 is located on thethird data line DL3.

The third pixel unit PU3 includes a fifth switch element TFT5, a sixthswitch element TFT6, a fifth common electrode CE5, a sixth commonelectrode CE6, a fifth pixel electrode PE5 and a sixth pixel electrodePE6.

The fifth common electrode CE5 and the sixth common electrode CE6 arerespectively located on a first side W1 and a second side W2 of thefirst scan line SL1. The sixth common electrode CE6 is electricallyconnected to the third signal line CL3 through a third conductivestructure CS3. The fifth pixel electrode PE5 and the sixth pixelelectrode PE6 are respectively overlapping a part of the fifth commonelectrode CE5 and a part of the sixth common electrode CE6.

The fifth switch element TFT5 includes a fifth drain electrode D5, afifth source electrode S5, a fifth gate electrode G5 and a fifthsemiconductor layer SM5. The fifth gate electrode G5 of the fifth switchelement TFT5 is electrically connected to the first scan line SL1, thefifth source electrode S5 is electrically connected to the third dataline DL3, and the fifth pixel electrode PE5 is electrically connected tothe fifth drain electrode D5 through a fifth contact TH5. At least partof the fifth semiconductor layer SM5 is located between the fifth gateelectrode G5, the fifth source electrode S5 and the fifth drainelectrode D5.

The sixth switch element TFT6 includes a sixth drain electrode D6, asixth source electrode S6, a sixth gate electrode G6 and a sixthsemiconductor layer SM6. The sixth gate electrode G6 of the sixth switchelement TFT6 is electrically connected to the first scan line SL1. In anembodiment, the sixth source electrode S6 of the sixth switch elementTFT6 may be electrically connected to the fifth source electrode S5;more specifically, the sixth source electrode S6 of the sixth switchelement TFT6 is electrically connected to the third data line DL3through the fifth switch element TFT5. The sixth pixel electrode PE6 iselectrically connected to the sixth drain electrode D6 through a sixthcontact TH6. At least part of the sixth semiconductor layer SM6 islocated between the sixth gate electrode G6, the sixth source electrodeS6 and the sixth drain electrode D6.

In the present embodiment, the fifth drain electrode D5 of the fifthswitch element TFT5 and the sixth drain electrode D6 of the sixth switchelement TFT6 both extend towards the fifth pixel electrode PE5.

In an embodiment, the first common electrode CE1 is electricallyconnected to the third common electrode CE3 and the fifth commonelectrode CE5. The second common electrode CE2 is electrically connectedto the fourth common electrode CE4 and the sixth common electrode CE6.In an embodiment, the third common electrode CE3, the first commonelectrode CE1 and the fifth common electrode CE5 are structurallyconnected in sequence, and the fourth common electrode CE4, the secondcommon electrode CE2 and the sixth common electrode CE6 are structurallyconnected in sequence.

In an embodiment, the third pixel unit PU3 further includes a thirdsharing element ST3. The third sharing element ST3 includes a gateelectrode SG3, a semiconductor layer SSM3, a source electrode SS3 and adrain electrode SD3. The gate electrode SG3 of the third sharing elementST3 is electrically connected to the first scan line SL1. At least partof the semiconductor layer SSM3 is located between the gate electrodeSG3, the source electrode SS3 and the drain electrode SD3. The sourceelectrode SS3 of the third sharing element ST3 is electrically connectedto the sixth pixel electrode PE6 through the sixth contact TH6, and thethird conductive structure CS3 electrically connects the third signalline CL3, the drain electrode SD3 of the third sharing element ST3 andthe sixth common electrode CE6.

Based on the above, in the pixel array 40 of the present embodiment, thefirst pixel unit PU1 has the first conductive structure CS1, the secondpixel unit PU2 has the second conductive structure CS2, and the thirdpixel unit PU3 has the third conductive structure CS3. The second commonelectrode CE2 of the first pixel unit PU1 can be electrically connectedto the third common electrode CE3 of the second pixel unit PU2 simplythrough the first conductive structure CS1, the second conductivestructure CS2 and the first signal line CL1. Because the commonelectrodes on the different sides of the scan line can be electricallyconnected by utilizing the conductive structures in the different pixelunits and commonly constitute a mesh structure, the number of theconductive structures required for conducting through the commonelectrodes can be reduced. In an embodiment, the first sharing elementST1 is electrically connected to the second common electrode CE2 and thefirst signal line CL1 through the first conductive structure CS1, thesecond sharing element ST2 is electrically connected to the third commonelectrode CE3 and the first signal line CL1 through the secondconductive structure CS2, and the third sharing element ST3 iselectrically connected to the sixth common electrode CE6 and the thirdsignal line CL3 through the third conductive structure CS3. In this way,the problem regarding insufficient aperture ratio of the pixel array 40can be solved.

FIG. 5 is a top view of a pixel array 50 according to an embodiment ofthe invention. It should be noted that, the embodiment of FIG. 5 adoptsthe reference numbers and part of the content in the embodiment of FIG.1, where identical or similar reference numbers are used to indicateidentical or similar components, and repeated description for the sametechnical contents is omitted. The omitted part of the description canrefer to the foregoing embodiment, which is not repeated in thefollowing embodiments.

The difference between the pixel array 50 of FIG. 5 and the pixel array10 of FIG. 1 is that, the pixel array 50 further includes a third dataline DL3, a fourth data line DL4, a third signal line CL3, a fourthsignal line CL4 and a third pixel unit PU3.

The third data line DL3 and the fourth data line DL4 are disposedintersecting the first scan line SL1. The first data line DL1 is locatedbetween the second data line DL2 and the third data line DL3, and thethird data line DL3 is located between the first data line DL1 and thefourth data line DL4. The third signal line CL3 is located on the thirddata line DL3. The fourth signal line CL4 is located on the fourth dataline DL4.

The third pixel unit PU3 includes a fifth switch element TFT5, a sixthswitch element TFT6, a fifth common electrode CE5, a sixth commonelectrode CE6, a fifth pixel electrode PE5 and a sixth pixel electrodePE6.

The fifth common electrode CE5 and the sixth common electrode CE6 arerespectively located on a first side W1 and a second side W2 of thefirst scan line SL1. The fifth common electrode CE5 is electricallyconnected to the fourth signal line CL4 through a third conductivestructure CS3. The fifth pixel electrode PE5 and the sixth pixelelectrode PE6 are respectively overlapping a part of the fifth commonelectrode CE5 and a part of the sixth common electrode CE6.

The fifth switch element TFT5 includes a fifth drain electrode D5, afifth source electrode S5, a fifth gate electrode G5 and a fifthsemiconductor layer SM5. The fifth gate electrode G5 of the fifth switchelement TFT5 is electrically connected to the first scan line SL1, thefifth source electrode S5 is electrically connected to the third dataline DL3, and the fifth pixel electrode PE5 is electrically connected tothe fifth drain electrode D5 through a fifth contact TH5. At least partof the fifth semiconductor layer SM5 is located between the fifth gateelectrode G5, the fifth source electrode S5 and the fifth drainelectrode D5.

The sixth switch element TFT6 includes a sixth drain electrode D6, asixth source electrode S6, a sixth gate electrode G6 and a sixthsemiconductor layer SM6. The sixth gate electrode G6 of the sixth switchelement TFT6 is electrically connected to the first scan line SL1. In anembodiment, the sixth source electrode S6 of the sixth switch elementTFT6 may be electrically connected to the fifth source electrode S5;more specifically, the sixth source electrode S6 of the sixth switchelement TFT6 is electrically connected to the third data line DL3through the fifth switch element TFT5. The sixth pixel electrode PE6 iselectrically connected to the sixth drain electrode D6 through a sixthcontact TH6. At least part of the sixth semiconductor layer SM6 islocated between the sixth gate electrode G6, the sixth source electrodeS6 and the sixth drain electrode D6.

In the present embodiment, the fifth drain electrode D5 of the fifthswitch element TFT5 extends towards the fifth pixel electrode PE5, andthe sixth drain electrode D6 of the sixth switch element TFT6 extendstowards the sixth pixel electrode PE6.

In an embodiment, the first common electrode CE1 is electricallyconnected to the third common electrode CE3 and the fifth commonelectrode CE5. The second common electrode CE2 is electrically connectedto the fourth common electrode CE4 and the sixth common electrode CE6.In an embodiment, the third common electrode CE3, the first commonelectrode CE1 and the fifth common electrode CE5 are structurallyconnected in sequence, and the fourth common electrode CE4, the secondcommon electrode CE2 and the sixth common electrode CE6 are structurallyconnected in sequence.

In an embodiment, the third pixel unit PU3 further includes a thirdsharing element ST3. The third sharing element ST3 includes a gateelectrode SG3, a semiconductor layer SSM3, a source electrode SS3 and adrain electrode SD3. The gate electrode SG3 of the third sharing elementST3 is electrically connected to the first scan line SL1. At least partof the semiconductor layer SSM3 is located between the gate electrodeSG3, the source electrode SS3 and the drain electrode SD3. The sourceelectrode SS3 of the third sharing element ST3 is electrically connectedto the sixth pixel electrode PE6 through the sixth contact TH6, and thethird conductive structure CS3 electrically connects the fourth signalline CL4, the drain electrode SD3 of the third sharing element ST3 andthe fifth common electrode CE5.

Based on the above, in the pixel array 50 of the present embodiment, thefirst pixel unit PU1 has the first conductive structure CS1, the secondpixel unit PU2 has the second conductive structure CS2, and the thirdpixel unit PU3 has the third conductive structure CS3. The second commonelectrode CE2 of the first pixel unit PU1 can be electrically connectedto the third common electrode CE3 of the second pixel unit PU2 simplythrough the first conductive structure CS1, the second conductivestructure CS2 and the first signal line CL1. Because the commonelectrodes on the different sides of the scan line can be electricallyconnected by utilizing the conductive structures in the different pixelunits and commonly constitute a mesh structure, the number of theconductive structures required for conducting through the commonelectrodes can be reduced. In an embodiment, the first sharing elementST1 is electrically connected to the second common electrode CE2 and thefirst signal line CL1 through the first conductive structure CS1, thesecond sharing element ST2 is electrically connected to the third commonelectrode CE3 and the first signal line CL1 through the secondconductive structure CS2, and the third sharing element ST3 iselectrically connected to the fifth common electrode CE5 and the fourthsignal line CL4 through the third conductive structure CS3. In this way,the problem regarding insufficient aperture ratio of the pixel array 50can be solved.

To sum up, in the pixel array of the invention, the first pixel unit hasthe first conductive structure, and the second pixel unit has the secondconductive structure. The second common electrode of the first pixelunit can be electrically connected to the third common electrode of thesecond pixel unit simply through the first conductive structure, thesecond conductive structure and the first signal line. Because thecommon electrodes on the different sides of the scan line can beelectrically connected by utilizing the conductive structures in thedifferent pixel units and commonly constitute a mesh structure, thenumber of the conductive structures required for conducting through thecommon electrodes can be reduced. In an embodiment, the first sharingelement is electrically connected to the second common electrode and thefirst signal line through the first conductive structure, and the secondsharing element is electrically connected to the third common electrodeand the first signal line through the second conductive structure. Inthis way, the problem regarding the insufficient aperture ratio of thepixel array can be solved. In an embodiment, with structurally differentconductive structures being alternately arranged in the column directionand the row direction to prevent similar conductive structures fromgathering together, the impedance difference caused by the structurallydifferent conductive structures can be evenly distributed.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentinvention without departing from the scope or spirit of the invention.In view of the foregoing, it is intended that the present inventioncover modifications and variations of this invention provided they fallwithin the scope of the following claims and their equivalents.

What is claimed is:
 1. A pixel array, comprising: a first scan line; afirst data line, disposed intersecting the first scan line; a firstsignal line, located on the first data line; a first pixel unit and asecond pixel unit, the first data line being located between the firstpixel unit and the second pixel unit, wherein the first pixel unitcomprises: a first common electrode and a second common electrode,respectively located on a first side and a second side of the first scanline, wherein the second common electrode is electrically connected tothe first signal line through a first conductive structure; and a firstpixel electrode and a second pixel electrode, respectively overlapping apart of the first common electrode and a part of the second commonelectrode; the second pixel unit comprises: a third common electrode anda fourth common electrode, respectively located on the first side andthe second side of the first scan line, wherein the first commonelectrode is electrically connected to the third common electrode, thesecond common electrode is electrically connected to the fourth commonelectrode, and the third common electrode is electrically connected tothe first signal line through a second conductive structure; and a thirdpixel electrode and a fourth pixel electrode, respectively overlapping apart of the third common electrode and a part of the fourth commonelectrode.
 2. The pixel array as recited in claim 1, further comprising:a second data line, disposed intersecting the first scan line, thesecond pixel unit being located between the second data line and thefirst data line, wherein the first pixel unit comprises: a first switchelement, electrically connected to the first scan line and the firstdata line, the first pixel electrode being electrically connected to thefirst switch element through a first contact; and a second switchelement, electrically connected to the first scan line, the second pixelelectrode being electrically connected to the second switch elementthrough a second contact; the second pixel unit comprises: a thirdswitch element, electrically connected to the first scan line and thesecond data line, the third pixel electrode being electrically connectedto the third switch element through a third contact; and a fourth switchelement, electrically connected to the first scan line, the fourth pixelelectrode being electrically connected to the fourth switch elementthrough a fourth contact.
 3. The pixel array as recited in claim 2,wherein the first pixel unit further comprises a first sharing element,electrically connected to the second pixel electrode and the firstsignal line, and the second pixel unit further comprises a secondsharing element, electrically connected to the fourth pixel electrodeand the first signal line.
 4. The pixel array as recited in claim 3,wherein a source electrode of the first sharing element is electricallyconnected to the second switch element, and the first conductivestructure electrically connects a drain electrode of the first sharingelement, the first signal line and the second common electrode.
 5. Thepixel array as recited in claim 4, wherein a source electrode of thesecond sharing element is electrically connected to the fourth sharingelement, and the second conductive structure electrically connects adrain electrode of the second sharing element, the first signal line andthe third common electrode.
 6. The pixel array as recited in claim 2,wherein the first switch element comprises a first drain electrode, thesecond switch element comprises a second drain electrode, and the firstdrain electrode and the second drain electrode both extend towards thefirst pixel electrode.
 7. The pixel array as recited in claim 6, whereinthe third switch element comprises a third drain electrode, the fourthswitch element comprises a fourth drain electrode, the third drainelectrode extends towards the third pixel electrode, and the fourthdrain electrode extends towards the fourth pixel electrode.
 8. The pixelarray as recited in claim 7, wherein the first switch element comprisesa first source electrode, the second switch element comprises a secondsource electrode, the third switch element comprises a third sourceelectrode, the fourth switch element comprises a fourth sourceelectrode, the first source electrode is electrically connected to thesecond source electrode, and the third source electrode is electricallyconnected to the fourth source electrode.
 9. The pixel array as recitedin claim 2, further comprising: a second scan line, disposedintersecting the first data line and the second data line; a third pixelunit, comprising: a fifth switch element and a sixth switch element,electrically connected to the second scan line; a fifth common electrodeand a sixth common electrode, respectively located on a first side and asecond side of the second scan line; a fifth pixel electrode and a sixthpixel electrode, respectively overlapping a part of the fifth commonelectrode and a part of the sixth common electrode, the fifth pixelelectrode being electrically connected to the fifth switch elementthrough a fifth contact, the sixth pixel electrode being electricallyconnected to the sixth switch element through a sixth contact; a firstsharing element, wherein a source electrode of the first sharing elementis electrically connected to the sixth pixel electrode, and a drainelectrode of the first sharing element is electrically connected to thesixth common electrode; and a third conductive structure, electricallyconnecting the first signal line and the drain electrode of the firstsharing element; and a fourth pixel unit, comprising: a seventh switchelement and an eighth switch element, electrically connected to thesecond scan line; a seventh common electrode and an eighth commonelectrode, respectively located on the first side and the second side ofthe second scan line, the fifth common electrode being electricallyconnected to the seventh common electrode, the sixth common electrodebeing electrically connected to the eighth common electrode; a seventhpixel electrode and an eighth pixel electrode, respectively overlappinga part of the seventh common electrode and a part of the eighth commonelectrode, the seventh pixel electrode being electrically connected tothe seventh switch element through a seventh contact, the eighth pixelelectrode being electrically connected to the eighth switch elementthrough an eighth contact; a second sharing element, wherein a sourceelectrode of the second sharing element is electrically connected to theeighth pixel electrode, and a drain electrode of the second sharingelement is electrically connected to the seventh common electrode; and afourth conductive structure, electrically connecting the first signalline and the drain electrode of the second sharing element.
 10. Thepixel array as recited in claim 9, wherein the fifth common electrode iselectrically connected to the second common electrode, and the seventhcommon electrode is electrically connected to the fourth commonelectrode.
 11. The pixel array as recited in claim 2, furthercomprising: a second scan line, disposed intersecting the first dataline and the second data line; a third data line, disposed intersectingthe first scan line and the second scan line, wherein the first dataline is located between the second data line and the third data line; asecond signal line, located on the second data line; a third signalline, located on the third data line; a third pixel unit, comprising: afifth common electrode and a sixth common electrode, respectivelylocated on a first side and a second side of the second scan line; afifth pixel electrode and a sixth pixel electrode, respectivelyoverlapping a part of the fifth common electrode and a part of the sixthcommon electrode, the fifth common electrode being electricallyconnected to the third signal line through a third conductive structure;and a fourth pixel unit, located between the first data line and thesecond data line, and comprising: a seventh common electrode and aneighth common electrode, respectively located on the first side and thesecond side of the second scan line, the fifth common electrode beingelectrically connected to the seventh common electrode, the sixth commonelectrode being electrically connected to the eighth common electrode; aseventh pixel electrode and an eighth pixel electrode, respectivelyoverlapping a part of the seventh common electrode and a part of theeighth common electrode, the eighth common electrode being electricallyconnected to the second signal line through a fourth conductivestructure.
 12. The pixel array as recited in claim 11, wherein the thirdpixel unit further comprises: a fifth switch element and a sixth switchelement, electrically connected to the second scan line, wherein thefifth pixel electrode is electrically connected to the fifth switchelement through a fifth contact, and the sixth pixel electrode iselectrically connected to the sixth switch element through a sixthcontact; a first sharing element, wherein a source electrode of thefirst sharing element is electrically connected to the sixth pixelelectrode, and the third conductive structure electrically connects adrain electrode of the first sharing element, the third signal line andthe fifth common electrode; and the fourth pixel unit further comprises:a seventh switch element and an eighth switch element, electricallyconnected to the second scan line, wherein the seventh pixel electrodeis electrically connected to the seventh switch element through aseventh contact, and the eighth pixel electrode is electricallyconnected to the eighth switch element through an eighth contact; asecond sharing element, wherein a source electrode of the second sharingelement is electrically connected to the eighth pixel electrode, and thefourth conductive structure electrically connects a drain electrode ofthe second sharing element, the second signal line and the eighth commonelectrode.
 13. The pixel array as recited in claim 12, wherein the firstswitch element comprises a first drain electrode, the second switchelement comprises a second drain electrode, and the first drainelectrode and the second drain electrode both extend towards the firstpixel electrode; the third switch element comprises a third drainelectrode, the fourth switch element comprises a fourth drain electrode,the third drain electrode extends towards the third pixel electrode, andthe fourth drain electrode extends towards the fourth pixel electrode;the fifth switch element comprises a fifth drain electrode, the sixthswitch element comprises a sixth drain electrode, the fifth drainelectrode extends towards the fifth pixel electrode, and the sixth drainelectrode extends towards the sixth pixel electrode; the seventh switchelement comprises a seventh drain electrode, the eighth switch elementcomprises an eighth drain electrode, and the seventh drain electrode andthe eighth drain electrode both extend towards the seventh pixelelectrode.
 14. The pixel array as recited in claim 2, furthercomprising: a third data line, disposed intersecting the first scanline, wherein the first data line is located between the second dataline and the third data line; a third signal line, located on the thirddata line; a third pixel unit, comprising: a fifth switch element and asixth switch element, electrically connected to the first scan line andthe third data line; a fifth common electrode and a sixth commonelectrode, respectively located on the first side and the second side ofthe first scan line, wherein the sixth common electrode is electricallyconnected to the third signal line through a third conductive structure;a fifth pixel electrode and a sixth pixel electrode, respectivelyoverlapping a part of the fifth common electrode and a part of the sixthcommon electrode, the fifth pixel electrode being electrically connectedto the fifth switch element through a fifth contact, the sixth pixelelectrode being electrically connected to the sixth switch elementthrough a sixth contact.
 15. The pixel array as recited in claim 14,wherein the first switch element comprises a first drain electrode, thesecond switch element comprises a second drain electrode, and the firstdrain electrode and the second drain electrode both extend towards thefirst pixel electrode; the third switch element comprises a third drainelectrode, the fourth switch element comprises a fourth drain electrode,the third drain electrode extends towards the third pixel electrode, andthe fourth drain electrode extends towards the fourth pixel electrode;the fifth switch element comprises a fifth drain electrode, the sixthswitch element comprises a sixth drain electrode, and the fifth drainelectrode and the sixth drain electrode both extend towards the fifthpixel electrode; the first common electrode is electrically connected tothe third common electrode and the fifth common electrode, and thesecond common electrode is electrically connected to the fourth commonelectrode and the sixth common electrode.
 16. The pixel array as recitedin claim 2, further comprising: a third data line and a fourth dataline, disposed intersecting the first scan line, wherein the first dataline is located between the second data line and the third data line,and the third data line is located between the first data line and thefourth data line; a third signal line, located on the third data line; afourth signal line, located on the fourth data line; a third pixel unit,comprising: a fifth switch element and a sixth switch element,electrically connected to the first scan line and the third data line; afifth common electrode and a sixth common electrode, respectivelylocated on the first side and the second side of the first scan line,wherein the fifth common electrode is electrically connected to thefourth signal line through a third conductive structure; a fifth pixelelectrode and a sixth pixel electrode, respectively overlapping a partof the fifth common electrode and a part of the sixth common electrode,the fifth pixel electrode being electrically connected to the fifthswitch element through a fifth contact, the sixth pixel electrode beingelectrically connected to the sixth switch element through a sixthcontact.
 17. The pixel array as recited in claim 16, wherein the firstswitch element comprises a first drain electrode, the second switchelement comprises a second drain electrode, and the first drainelectrode and the second drain electrode both extend towards the firstpixel electrode; the third switch element comprises a third drainelectrode, the fourth switch element comprises a fourth drain electrode,the third drain electrode extends towards the third pixel electrode, andthe fourth drain electrode extends towards the fourth pixel electrode;the fifth switch element comprises a fifth drain electrode, the sixthswitch element comprises a sixth drain electrode, the fifth drainelectrode extends towards the fifth pixel electrode, and the sixth drainelectrode extends towards the sixth pixel electrode; the first commonelectrode is electrically connected to the third common electrode andthe fifth common electrode, and the second common electrode iselectrically connected to the fourth common electrode and the sixthcommon electrode.
 18. The pixel array as recited in claim 1, wherein thefirst common electrode, the second common electrode, the third commonelectrode, the fourth common electrode and the first scan line belong toa same film layer, and the first pixel electrode, the second pixelelectrode, the third pixel electrode, the fourth pixel electrode and thefirst signal line belong to a same film layer.